cph3123 / cph3223 no.7221-1/7 applications ? dc-dc converters, relay drivers, lamp drivers, motor drivers, ash features ? adoption of mbit processes ? large current capacity ? low collector-to-emitter saturation voltage ? high-speed switching ? ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm) ? high allowable power dissipation speci cations ( ): cph3123 absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--50)100 v collector-to-emitter voltage v ces (--50)100 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)3 a collector current (pulse) i cp (--)6 a base current i b (--)600 ma collector dissipation p c when mounted on ceramic substrate (600mm 2 0.8mm) 0.9 w junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7015a-003 ordering number : EN7221b 70412 tkim/n1504 tsim tb-00000301/71002 tsim ta-100095, 3619 sanyo semiconductors data sheet cph3123 / cph3223 http:// semicon.sanyo.com/en/network product & package information ? package : cph3 ? jeita, jedec : sc-59, to-236, sot-23 ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection tl 1 : base 2 : emitter 3 : collector sanyo : cph3 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 2 1 3 0.95 3 2 1 3 2 1 cph3223 cph3123 au lot no. cu lot no. cph3223 cph3123 pnp / npn epitaxial planar silicon transistors high-current switching applications cph3123-tl-e cph3223-tl-e
cph3123 / cph3223 no.7221-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)40v, i e =0a (--)1 a emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)1 a dc current gain h fe v ce =(--)2v, i c =(--)100ma 200 560 gain-bandwidth product f t v ce =(--)10v, i c =(--)500ma (390)380 mhz output capacitance cob v cb =(--)10v, f=1mhz (24)13 pf collector-to-emitter saturation voltage v ce (sat)1 i c =(--)1a, i b =(--)50ma (--115)90 (--230)130 mv v ce (sat)2 i c =(--)2a, i b =(--)100ma (--240)160 (--650)240 mv base-to-emitter saturation voltage v be (sat) i c =(--)2a, i b =(--)100ma (--)0.88 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--50)100 v collector-to-base breakdown voltage v (br)ces i c =(--)100 a,r be =0 (--50)100 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)6 v turn-on time t on see speci ed test circuit. (30)35 ns storage time t stg (230)300 ns fall time t f (18)25 ns switching time test circuit ordering information device package shipping memo cph3123-tl-e cph3 3,000pcs./reel pb free cph3223-tl-e cph3 3,000pcs./reel pb free 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0.4 0.6 0.2 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 i c -- v ce 0 --0.2 --0.3 --0.1 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 i b =0 i b =0 collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a cph3123 cph3223 --4ma --10ma --8ma --6ma --30ma --20ma --40ma 10ma 5ma 20ma 40ma 60ma 80ma 100ma --2ma it04564 it04565 v r r b v cc = --25v v be =5v + + 50 input outpu t r l 100 f 470 f pw=20 s i b1 d.c. 1% i b2 i c = --10i b1 =10i b2 = --1a cph3123 v r r b v cc =25v v be = --5v + + 50 input outpu t r l 100 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =10i b1 = --10i b2 =1a cph3223
cph3123 / cph3223 no.7221-3/7 5 7 10 2 3 5 7 100 0.1 23 57 1.0 23 57 10 23 57 100 7 100 2 3 5 7 1000 0.01 23 57 0.1 23 57 1.0 23 5 ta=75 c 25 c --25 c 5 7 100 2 3 5 7 1000 h fe -- i c --0.01 23 57 --0.1 23 57 --1.0 23 5 collector current, i c -- a dc current gain, h fe h fe -- i c collector current, i c -- a dc current gain, h fe cph3123 v ce = --2v cph3223 v ce =2v it04568 it04569 ta=75 c 25 c -- 2 5 c 10 2 3 5 7 100 2 3 5 7 1000 0.01 23 57 0.1 23 57 1.0 23 5 3 5 7 100 2 3 5 7 1000 f t -- i c --0.01 23 57 --0.1 23 57 --1.0 23 5 collector current, i c -- a gain-bandwidth product, f t -- mhz f t -- i c collector current, i c -- a gain-bandwidth product, f t -- mhz cph3123 v ce = --10v cph3223 v ce =10v it04570 it04571 10 2 3 5 7 100 cob -- v cb --1.0 23 57 --10 23 57 --100 collector-to-base voltage, v cb -- v output capacitance, cob -- pf cph3123 f=1mhz it04572 cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf cph3223 f=1mhz it04573 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 i c -- v be collector current, i c -- a base-to-emitter voltage, v be -- v cph3123 v ce = --2v i c -- v be collector current, i c -- a base-to-emitter voltage, v be -- v cph3223 v ce =2v it04566 it04567 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 25 c --25 c ta=75 c 25 c --25 c ta=75 c
cph3123 / cph3223 no.7221-4/7 0.01 23 57 0.1 23 57 1.0 23 5 10 2 3 5 7 100 2 3 5 7 3 5 7 1.0 2 3 0.01 23 57 0.1 23 57 1.0 23 57 10 ta= --25 c 75 c 3 5 7 --1.0 2 3 v be (sat) -- i c --0.01 23 57 --0.1 23 57 --1.0 23 57 --10 v be (sat) -- i c it04578 it04579 ta= --25 c 75 c --10 2 --100 2 3 5 7 --1000 3 5 7 2 3 5 7 v ce (sat) -- i c --0.01 23 57 --0.1 23 57 --1.0 23 57 --10 v ce (sat) -- i c cph3123 i c / i b =50 cph3123 i c / i b =50 cph3223 i c / i b =50 cph3223 i c / i b =50 it04576 it04577 ta=75 c --25 c 25 c ta=75 c --25 c 25 c 0 20 40 60 80 100 120 140 160 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.01 0.1 2 3 5 7 1.0 2 3 5 7 2 3 5 7 10 a s o 0.1 23 57 1.0 23 57 10 23 57 100 collector-to-emitter voltage, v ce -- v collector current, i c -- a p c -- ta ambient temperature, ta -- c collector dissipation, p c -- w it04580 it04581 25 c 25 c cph3123 / cph3223 ta=25 c single pulse for pnp, minus sign is omitted. mounted on a ceramic board (600mm 2 0.8mm) < 50 s 100 s 500 s 10ms 100ms 1ms dc oper ation i cp =6a i c =3a cph3123 / cph3223 mounted on a ceramic board (600mm 2 0.8mm) collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v 0.01 23 57 0.1 23 57 1.0 23 57 10 10 2 3 5 7 100 2 3 5 --10 2 --100 2 3 5 7 --1000 3 5 7 2 3 5 v ce (sat) -- i c --0.01 23 57 --0.1 23 57 --1.0 23 57 --10 v ce (sat) -- i c cph3123 i c / i b =20 cph3223 i c / i b =20 it04574 it04575 ta=75 c - -25 c 25 c -- 2 5 c 25 c ta=75 c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv
cph3123 / cph3223 no.7221-5/7 embossed taping speci cation cph3123-tl-e, cph3223-tl-e
cph3123 / cph3223 no.7221-6/7 outline drawing land pattern example cph3123-tl-e, cph3223-tl-e mass (g) unit 0.013 * for reference mm unit: mm 0.6 2.4 0.95 0.95 1.4
cph3123 / cph3223 ps no.7221-7/7 this catalog provides information as of july, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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